Karibu Hitech Semiconductor Co., Limited

STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT

2024-07-19

STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT

STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT is developed using an advanced proprietary trench gate field-stop structure. This IGBT, part of the MS series, is designed explicitly for inverter systems. Its outstanding short-circuit capability at high bus voltages makes it ideal for such applications. Also, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution contribute to safer paralleling operations. The GWA40MS120DF4AG automotive-grade IGBT features a 1200V collector-emitter voltage (VGE=0V), 40A continuous collector current (TC=100°C), and a 120A pulse forward current. This IGBT comes in a TO-247 long leads package and operates within the -55°C to 175°C temperature range. Typical applications include auxiliary loads, thermal management, and PTC heaters.

FEATURES

  • Advanced proprietary trench gate field-stop structure
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance

SPECIFICATIONS

  • AEC-Q101 qualified
  • 8μs of short-circuit withstand time at VCC=800V, VGE=15V, T(start)=175°C
  • 1200V collector-emitter voltage at VGE=0V
  • 40A continuous collector current at TC=100°C
  • 120A pulse forward current
  • 536W total power dissipation at TC=25°C
  • -55°C to 175°C operating temperature range

APPLICATIONS

  • Auxiliary loads
  • Thermal management
  • PTC heaters

TEST CIRCUITS

STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT

PACKAGE INFORMATION

Mechanical Drawing - STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT
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