Silicon Carbide (SiC) MOSFETs in 1200 V and 1700 V
MCC’s N-channel SiC MOSFETs have optimum performance when driven with maximum voltage
MCC’s SiC MOSFETs are optimized for higher switching frequency, high blocking voltage with low on-resistance (RDS(ON)), and avalanche capability. These products work well in the gate-source voltage (VGS) range from -4 V to +18 V (1200 V) and -3 V to +20 V (1700 V). These N-channel MOSFETs have optimum performance when driven with maximum voltage. The RDS(ON) stability over the temperature helps to reduce the heatsink size/requirements.
Features
- Optimized for higher switching frequency
- Stable on resistance over temperature
- High blocking voltage with low RDS(ON)
- Reduced heatsink requirement
- Improved system-level efficiency
- Avalanche ruggedness
Applications
- Photovoltaics/solar inverters
- Energy storage
- UPS
- Motor controls/drive circuits
- Battery chargers
- Off-board chargers