e-mode GaN FETs
Nexperia GaN FETs have an enhancement mode configuration for low (100 V/150 V) and high (650 V) voltage applications
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due to very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion, as well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers. Nexperia’s portfolio includes five 650 V rated e-mode GaN FETs with RDS(ON) values between 80 mΩ and 190 mΩ in a choice of DFN 5 mm x 6 mm and DFN 8 mm x 8 mm packages. They improve power conversion efficiency in high-voltage, low-power (<650 V) datacom/telecom, consumer charging, solar, and industrial applications. They can also be used to design brushless DC motors and micro server drives for precision with higher torque and more power.
- Enhancement mode, normally-off power switch
- Ultra-high-frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- ESD protection
- RoHS, Pb-free, and REACH-compliant
- High efficiency and high power density
- Land grid array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm
- Low package inductance and low package resistance
- High power density and high-efficiency power conversion
- AC-to-DC converters (secondary stage), totem pole PFC
- High-frequency DC-to-DC converters in 48 V systems
- 400 V to 48 V LLC converters, secondary (rectification) side
- LiDAR (non-automotive)
- DC-to-DC converters
- Solar (PV) inverters
- Class D audio amplifiers, TV PSU, and LED drivers
- Datacom and telecom (AC-to-DC and DC-to-DC) converters
- Fast battery charging, mobile phone, laptop, tablet, and USB Type-C® chargers
- Motor drives